TPC8116-H 2006-01-17 1 toshiba field effect transistor silicon p-channel mos type (ultra-high-speed u-mosiii) TPC8116-H high efficiency dc dc converter applications notebook pc applications portable equipment applications ccfl inverter applications ? small footprint due to a small and thin package ? high speed switching ? small gate charge: q sw = 9.7 nc (typ.) ? low drain-source on-resistance: r ds (on) = 24m ? (typ.) ? high forward transfer admittance: |y fs | =14 s (typ.) ? low leakage current: i dss = ? 10 a (max) (v ds = ? 40 v) ? enhancement mode: v th = ? 0.8 to ? 2.0 v (v ds = ? 10 v, i d = ? 1 ma) maximum ratings (ta = 25c) characteristic symbol rating unit drain-source voltage v dss ? 40 v drain-gate voltage (r gs = 20 k ? ) v dgr ? 40 v gate-source voltage v gss 20 v dc (note 1) i d ? 7.5 drain current pulsed (note 1) i dp ? 30 a drain power dissipation (t = 10 s) (note 2a) p d 1.9 w drain power dissipation (t = 10 s) (note 2b) p d 1.0 w single-pulse avalanche energy (note 3) e as 26 mj avalanche current i ar ? 7.5 a repetitive avalanche energy (note 2a) (note 4) e ar 0.12 mj channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: for notes 1 to 4, refer to the next page. this transistor is an electrostatic-sensitive device. handle with care. unit: mm jedec ? jeita ? toshiba 2-6j1b weight: 0.085 g (typ.) circuit configuration 8 6 1 2 3 7 5 4
TPC8116-H 2006-01-17 2 thermal characteristics characteristic symbol max unit thermal resistance, channel to ambient (t = 10 s) (note 2a) r th (ch-a) 65.8 c/w thermal resistance, channel to ambient (t = 10 s) (note 2b) r th (ch-a) 125 c/w marking (note 5) note 1: the channel temperature should not exceed 150c during use. note 2: (a) device mounted on a glass-epoxy board (a) (b) device mounted on a glass-epoxy board (b) note 3: v dd = ? 24 v, t ch = 25c (initial), l = 0.5 mh, r g = 25 ? , i ar = ?7.5 a note 4: repetitive rating: pulse width limited by max channel temperature note 5: ? on the lower left of the marking indicates pin 1. (a) fr-4 25.4 25.4 0.8 (unit: mm) (b) fr-4 25.4 25.4 0.8 (unit: mm) * weekly code: (three digits) week of manufacture (01 for first week of the year, continuing up to 52 or 53) year of manufacture (the last digit of the calendar year) tpc8116 h lot no. a line indicates lead (pb)-free package or lead (pb)-free finish. part no. (or abbreviation code)
TPC8116-H 2006-01-17 3 electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit gate leakage current i gss v gs = 16 v, v ds = 0 v ? ? 10 a drain cutoff current i dss v ds = ? 40 v, v gs = 0 v ? ? ? 10 a v (br) dss i d = ? 10 ma, v gs = 0 v ? 40 ? ? drain-source breakdown voltage v (br) dsx i d = ? 10 ma, v gs = 20 v ? 20 ? ? v gate threshold voltage v th v ds = ? 10 v, i d = ? 1 ma ? 0.8 ? ? 2.0 v v gs = ? 4.5 v, i d = ? 3.8 a ? 29 37 drain-source on-resistance r ds (on) v gs = ? 10 v, i d = ? 3.8 a ? 24 30 m ? forward transfer admittance |y fs | v ds = ? 10 v, i d = ? 3.8 a 7 14 ? s input capacitance c iss ? 1190 ? reverse transfer capacitance c rss ? 170 ? output capacitance c oss v ds = ? 10 v, v gs = 0 v, f = 1 mhz ? 250 ? pf rise time t r ? 5 ? turn-on time t on ? 12 ? fall time t f ? 12 ? switching time turn-off time t off duty < = = 10 s ? 43 ? ns v dd ? ? 32 v, v gs =? 10v, i d = ? 7.5a ? 27 ? total gate charge (gate-source plus gate-drain) q g v dd ? ? 32 v, v gs = ? 5 v, i d = ? 7.5a ? 15 ? gate-source charge 1 q gs1 ? 3.2 ? gate-drain (?miller?) charge q gd ? 8.1 ? gate switch charge q sw v dd ? ? 32 v, v gs = ? 10 v, i d = ? 7.5a ? 9.7 ? nc source-drain ratings and characteristics (ta = 25c) characteristic symbol test condition min typ. max unit drain reverse current pulse (note 1) i drp ? ? ? ? 30 a forward voltage (diode) v dsf i dr = ? 7.5 a, v gs = 0 v ? ? 1.2 v r l = 5.3 ? v dd ? ? 20 v -10 v v gs 0 v 4.7 ? i d = ? 3.8 a v out
TPC8116-H 2006-01-17 4 ta = ? 55c 25 100 v gs = ? 2.4 v ? 3 ? ? 2.5 ? ? 8 ? 10 ? 4 ? 2.6 ? 2.7 ? 2.8 ? 4.5 ? 6 3 ? 0.1 ? 10 30 300 ? 100 0.1 100 ? 0.1 ? 1 ? 100 ? 10 10 0 ? 0.3 ? 0.4 ? 0.5 0 ? 4 ? 6 ? 8 ? 10 ? 12 ? 0.2 ? 0.1 0 0 ? 1 ? 2 ? 3 ? 10 ? 30 ? 15 ? 20 ? 5 ? 5 r ds (on) ? i d i d ? v gs v ds ? v gs ? y fs ? ? i d i d = ? 7.5 a ? 3.8 ? 1.9 common source ta = 25 pulse test 1 ? 1 i d ? v ds i d ? v ds 0 ? 10 ? 2 ? 6 ? 4 ? 8 ? 0.2 0 ? 1.0 ? 0.4 ? 0.6 ? 0.8 0 ? 20 ? 4 ? 12 ? 8 ? 16 ? 0.4 0 ? 2.0 ? 0.8 ? 1.2 ? 1.6 25 100 ta = ? 55c common source v ds = ? 10 v pulse test common source ta = 25c pulse test common source ta = 25c pulse test v gs = ? 2.4 v ? 3.4 ? 2.6 ? 3.2 ? 8 ? 10 ? ? 2.8 ? 3 ? 4.5 ? 6 common source v ds = ? 10 v pulse test ? 25 ? 4 ? 2 v gs = ? 10 v common source ta = 25c pulse test ? 4.5 v 10 100 drain current i d (a) drain-source on-resistance r ds (on) (m ? ) gate-source voltage v gs (v) drain current i d (a) drain-source voltage v ds (v) gate-source voltage v gs (v) drain current i d (a) forward transfer admittance |y fs | (s) drain-source voltage v ds (v) drain current i d (a) drain-source voltage v ds (v) drain current i d (a)
TPC8116-H 2006-01-17 5 ? 0.1 ? 10 ? 100 i dr ? v ds ? 1 ? 10 ? 3 ? 1 v gs = 0 v common source ta = 25c pulse test ? 4.5 10 ? 0.1 100 1000 10000 ? 1 ? 10 ? 100 c iss c oss c rss common source v gs = 0 v f = 1 mhz ta = 25c 160 ? 40 0 40 80 120 ? 80 40 30 20 10 0 r ds (on) ? ta 50 i d = ? 1.9/ ? 3.8/ ? 7.5a ? 1.9 ? 3.8 v gs = ? 4.5 v ? 10 v i d = ? 7.5 a common source pulse test 0 ? 0.4 ? 1.2 ? 80 ? 40 0 40 80 120 160 ? 0.8 v th ? ta ? 2.0 ? 1.6 common source v ds = ? 10 v i d = ? 1 ma pulse test ? 40 50 ? 20 ? 30 0 0 ? 16 ? 4 40 ? 12 0 20 30 10 ? 10 ? 8 v dd = ? 32 v v gs v ds common source i d = ? 7.5 a ta = 25c pulse test ? 16 ? 8 ? 50 ? 20 drain-source voltage v ds (v) capacitance c (pf) ambient temperature ta ( c) drain-source on-resistance r ds (on) (m ? ) gate threshold voltage v th (v) ambient temperature ta ( c) drain-source voltage v ds (v) drain reverse current i dr (a) gate-source voltage v gs (v) dynamic input/output characteristics total gate charge q g (nc) drain-source voltage v ds (v) capacitance ? v ds 0 0.2 0.8 1.0 1.2 0.4 0.6 2.0 1.2 0 0 50 100 150 1.6 200 0.8 0.4 ambient temperature ta ( c) p d ? ta drain power dissipation p d (w) (1) (2) (1) device mounted on a glass-epoxy board (a) (note 2a) (2) device mounted on a glass-epox y board (b) (note 2b) 10s
TPC8116-H 2006-01-17 6 r th ? t w pulse width t w (s) transient thermal impedance r th (c/w) 1 0.001 10 100 1000 0.01 0.1 1 10 100 1000 0.1 sin g le - p ulse (2) (1) (1) device mounted on a glass-epoxy board (a) (note 2a) (2) device mounted on a glass-epoxy board (b) (note 2b) safe operating area drain-source voltage v ds (v) drain current i d (a) ? 0.1 ? 100 ? 1 ? 10 ? 100 v dss max ? 10 ? 0.1 t =1 ms * i d max (pulse) * ? 1 10 ms * * single - pulse ta = 25c curves must be derated linearl y with increase in temperature.
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